CVDtungsten

由 PI Lee 著作 · 1989 · 被引用 45 次 — Blanket‐deposited CVD W has been developed and implemented in a 4‐Mbit DRAM and equivalent submicron VLSI technologies. CVD W was applied as contact stud, ...

由 WK Yeh 著作 · 1996 · 被引用 5 次 — This work investigates the basic deposition properties of selective tungsten chemical vapor deposition (W-CVD) using the process of silane reduction of WF6 ...

由 葉達勳 著作 · 1996 — 化學氣相沉積;鎢;選擇率;預清潔工作;擴散障礙層;熱穩定度;CVD;Tungsten;Selectivity;Precleaning;Diffusion barrier;Thermal stability. 公開日期: 1996. 摘要: 本論文 ...

The chemical vapor deposition of tungsten is done by using a WF 6 vapor with a gas flow of about 15-60 sccm. Generally, the time of the process is controlled ...

由 M Wilken 著作 · 2023 · 被引用 8 次 — CVD Grown Tungsten Oxide for Low Temperature Hydrogen Sensing: Tuning Surface Characteristics via Materials Processing for Sensing Applications.

Chemical Vapor Deposition of Tungsten and Tungsten Silicides for Vlsi/Ulsi Applications · 作者：Schmitz, John E. J. · 語言：英文 · 出版日期：1992/12/31.

CVD Tungsten. Chemical Vapour Deposition is a technique of depositing a wide variety of layers from conductors to epitaxial semiconductors to insulators. All ...

2015年12月2日 — The most common CVD reaction for tungsten is tungsten hexaflouride plus hydrogen and silane. The hydrogen bonds with the flourine atoms, ...